The Weak 3D Topological Insulator Bi12Rh3Sn3I9

Le Anh M, Kaiser M, Ghimire MP, Richter M, Koepernik K, Gruschwitz M, Tegenkamp C, Doert T, Ruck M (2020)

Publication Type: Journal article

Publication year: 2020

Journal

Chemistry - A European Journal Wiley

Book Volume: 26

Pages Range: 15549-15557

Journal Issue: 67

DOI: 10.1002/chem.202001953

Abstract

Topological insulators (TIs) gained high interest due to their protected electronic surface states that allow dissipation-free electron and information transport. In consequence, TIs are recommended as materials for spintronics and quantum computing. Yet, the number of well-characterized TIs is rather limited. To contribute to this field of research, we focused on new bismuth-based subiodides and recently succeeded in synthesizing a new compound Bi12Rh3Sn3I9, which is structurally closely related to Bi14Rh3I9 – a stable, layered material. In fact, Bi14Rh3I9 is the first experimentally supported weak 3D TI. Both structures are composed of well-defined intermetallic layers of ∞2[(Bi4Rh)3I]2+ with topologically protected electronic edge-states. The fundamental difference between Bi14Rh3I9 and Bi12Rh3Sn3I9 lies in the composition and the arrangement of the anionic spacer. While the intermetallic 2D TI layers in Bi14Rh3I9 are isolated by ∞1[Bi2I8]2− chains, the isoelectronic substitution of bismuth(III) with tin(II) leads to ∞2[Sn3I8]2− layers as anionic spacers. First transport experiments support the 2D character of this material class and revealed metallic conductivity.

Involved external institutions

Technische Universität Dresden DE Germany (DE) Tribhuvan University / त्रिभुवन विश्वविद्यालय NP Nepal (NP) Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden e.V. (IFW) / Leibniz Institute for Solid State and Materials Research Dresden DE Germany (DE) Technische Universität Chemnitz DE Germany (DE)

How to cite

APA:

Le Anh, M., Kaiser, M., Ghimire, M.P., Richter, M., Koepernik, K., Gruschwitz, M.,... Ruck, M. (2020). The Weak 3D Topological Insulator Bi12Rh3Sn3I9. Chemistry - A European Journal, 26(67), 15549-15557. https://doi.org/10.1002/chem.202001953

MLA:

Le Anh, Mai, et al. "The Weak 3D Topological Insulator Bi12Rh3Sn3I9." Chemistry - A European Journal 26.67 (2020): 15549-15557.

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