High-field magnetotransport studies of surface-conducting diamonds

Xing K, Creedon DL, Akhgar G, Yianni SA, McCallum JC, Ley L, Qi DC, Pakes CI (2022)

Publication Type: Journal article

Publication year: 2022

Journal

Physical Review B American Physical Society

Book Volume: 105

Article Number: 245307

Journal Issue: 24

DOI: 10.1103/PhysRevB.105.245307

Abstract

The observation of a strong and tunable spin-orbit interaction (SOI) in surface-conducting diamond opens up a new avenue for building diamond-based spintronics. Herein we provide a comprehensive method to analyze the magnetotransport behavior of surface-conducting hydrogen-terminated diamond (H-diamond) Hall bar devices and Al/Al2O3/V2O5/H-diamond metal-oxide semiconductor field-effect transistors, respectively. By adopting a significantly improved theoretical magnetotransport model, the reduced magnetoconductance can be accurately explained both within and outside the quantum diffusive regime. The model is valid for all doping strategies of surface-conducting diamond tested. From this analysis, we find that the orbital magnetoresistance, a classical effect distinct from the SOI, dominates the magnetotransport in surface-conducting diamond at high magnetic fields. Furthermore, local hole mobilities as high as 1000-3000cm2/Vs have been observed in this work, indicating the possibility of diamond-based electronics with ultrahigh hole mobilities at cryogenic temperatures.

Involved external institutions

Monash University AU Australia (AU) La Trobe University AU Australia (AU) Queensland University of Technology (QUT) AU Australia (AU)

How to cite

APA:

Xing, K., Creedon, D.L., Akhgar, G., Yianni, S.A., McCallum, J.C., Ley, L.,... Pakes, C.I. (2022). High-field magnetotransport studies of surface-conducting diamonds. Physical Review B, 105(24). https://dx.doi.org/10.1103/PhysRevB.105.245307

MLA:

Xing, Kaijian, et al. "High-field magnetotransport studies of surface-conducting diamonds." Physical Review B 105.24 (2022).

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