Attenuated phase shift masks: a wild card resolution enhancement for extreme ultraviolet lithography?

Erdmann A, Mesilhy H, Evanschitzky P (2022)

Publication Type: Journal article, Review article

Publication year: 2022

Journal

Journal of Micro/Nanopatterning, Materials, and Metrology Society of Photo-optical Instrumentation Engineers (SPIE)

Book Volume: 21

Journal Issue: 2

DOI: 10.1117/1.JMM.21.2.020901

Abstract

Background: The successful introduction of extreme ultraviolet (EUV) lithography to high volume manufacturing has increased the interest to push this technology to its ultimate limits. This will require photoresist materials, which enable a better tradeoff between resolution, linewidth roughness and sensitivity, and the adaptation of optical resolution enhancements that were originally developed for deep ultraviolet (DUV) lithography.

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Erdmann, A., Mesilhy, H., & Evanschitzky, P. (2022). Attenuated phase shift masks: a wild card resolution enhancement for extreme ultraviolet lithography? Journal of Micro/Nanopatterning, Materials, and Metrology, 21(2). https://doi.org/10.1117/1.JMM.21.2.020901

MLA:

Erdmann, Andreas, Hazem Mesilhy, and Peter Evanschitzky. "Attenuated phase shift masks: a wild card resolution enhancement for extreme ultraviolet lithography?" Journal of Micro/Nanopatterning, Materials, and Metrology 21.2 (2022).

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