Wafer-Scale Growth of Sb2Te3Films via Low-Temperature Atomic Layer Deposition for Self-Powered Photodetectors

Yang J, Li J, Bahrami A, Nasiri N, Lehmann S, Cichocka MO, Mukherjee S, Nielsch K (2022)

Publication Type: Journal article

Publication year: 2022

Journal

ACS Applied Materials and Interfaces American Chemical Society

Book Volume: 14

Pages Range: 54034-54043

Journal Issue: 48

DOI: 10.1021/acsami.2c16150

Abstract

In this work, we demonstrate the performance of a silicon-compatible, high-performance, and self-powered photodetector. A wide detection range from visible (405 nm) to near-infrared (1550 nm) light was enabled by the vertical p-n heterojunction between the p-type antimony telluride (Sb2Te3) thin film and the n-type silicon (Si) substrates. A Sb2Te3film with a good crystal quality, low density of extended defects, proper stoichiometry, p-type nature, and excellent uniformity across a 4 in. wafer was achieved by atomic layer deposition at 80 °C using (Et3Si)2Te and SbCl3as precursors. The processed photodetectors have a low dark current (∼20 pA), a high responsivity of (∼4.3 A/W at 405 nm and ∼150 mA/W at 1550 nm), a peak detectivity of ∼1.65 × 10¹⁴Jones, and a quick rise time of ∼98 μs under zero bias voltage. Density functional theory calculations reveal a narrow, near-direct, type-II band gap at the heterointerface that supports a strong built-in electric field leading to efficient separation of the photogenerated carriers. The devices have long-term air stability and efficient switching behavior even at elevated temperatures. These high-performance and self-powered p-Sb2Te3/n-Si heterojunction photodetectors have immense potential to become reliable technological building blocks for a plethora of innovative applications in next-generation optoelectronics, silicon-photonics, chip-level sensing, and detection.

Involved external institutions

Harbin Institute of Technology (HIT) / 哈工大

China (CN) Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden e.V. (IFW) / Leibniz Institute for Solid State and Materials Research Dresden

Germany (DE) Macquarie University

Australia (AU)

How to cite

APA:

Yang, J., Li, J., Bahrami, A., Nasiri, N., Lehmann, S., Cichocka, M.O.,... Nielsch, K. (2022). Wafer-Scale Growth of Sb2Te3Films via Low-Temperature Atomic Layer Deposition for Self-Powered Photodetectors. ACS Applied Materials and Interfaces, 14(48), 54034-54043. https://doi.org/10.1021/acsami.2c16150

MLA:

Yang, Jun, et al. "Wafer-Scale Growth of Sb2Te3Films via Low-Temperature Atomic Layer Deposition for Self-Powered Photodetectors." ACS Applied Materials and Interfaces 14.48 (2022): 54034-54043.

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