Epitaxy of >7 μm Thick GaN Drift Layers on 150 mm Si(111) Substrates Realizing Vertical PN Diodes with 1200 V Breakdown Voltage

Michler S, Hamdaoui Y, Thapa S, Schwalb G, Besendörfer S, Ziouche K, Albrecht M, Brunner F, Medjdoub F, Meissner E (2024)

Publication Type: Journal article

Publication year: 2024

Journal

physica status solidi (a) Wiley

DOI: 10.1002/pssa.202400544

Abstract

Metal-organic chemical vapor deposition growth of vertical GaN PN structures on 6″ Si(111) substrates enabling a 1200 V breakdown voltage is demonstrated. Thanks to an optimized buffer structure utilizing island growth in an AlN/Al0.1Ga0.9N superlattice, the threading dislocation density is drastically reduced, and sufficient compressive stress is incorporated in active GaN layers to compensate for the thermal mismatch. Crack-free PN structures with drift layer thicknesses up to 7.4 μm are realized with a threading dislocation density of ≈5 × 108 cm−2 and an absolute wafer bow <50 μm. Quasi-vertical PN diodes reveal a linear increase in the breakdown voltage with the drift layer thickness with an average breakdown field of ≈1.6 MV cm−1. Additionally, the leakage current is shown to decrease monotonically as the drift layer thickness increases. For a 7.4 μm thick drift layer with a net ionized donor concentration of 0.9 × 1016 cm−3, a high breakdown voltage of 1200 V, a low specific on-resistance of 0.4 mΩ cm−2, and a low leakage current of 10−4 A cm−2 (at a reverse bias of 650 V) are obtained. These results demonstrate the great potential of cost-effective vertical GaN-on-Si power devices operating in the kilovolt range.

Involved external institutions

Siltronic AG DE Germany (DE) LILLE 1 University - Science and Technology FR France (FR) Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE) Leibniz-Institut für Kristallzüchtung / Leibniz Institute for Crystal Growth DE Germany (DE) Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) DE Germany (DE)

How to cite

APA:

Michler, S., Hamdaoui, Y., Thapa, S., Schwalb, G., Besendörfer, S., Ziouche, K.,... Meissner, E. (2024). Epitaxy of >7 μm Thick GaN Drift Layers on 150 mm Si(111) Substrates Realizing Vertical PN Diodes with 1200 V Breakdown Voltage. physica status solidi (a). https://doi.org/10.1002/pssa.202400544

MLA:

Michler, Sondre, et al. "Epitaxy of >7 μm Thick GaN Drift Layers on 150 mm Si(111) Substrates Realizing Vertical PN Diodes with 1200 V Breakdown Voltage." physica status solidi (a) (2024).

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