Reduction of dark current in Ge-on-Si avalanche photodiodes using a double mesa structure
Wanitzek M, Hack M, Ramachandra H, Seidel L, Schwarz D, Schulze J, Oehme M (2024)
Publication Type: Conference contribution
Publication year: 2024
Publisher: SPIE
Book Volume: 13109
Conference Proceedings Title: Proceedings of SPIE - The International Society for Optical Engineering
Event location: San Diego, CA
ISBN: 9781510678781
DOI: 10.1117/12.3028061
Abstract
We demonstrate Ge-on-Si avalanche photodiodes based on a separate absorption, charge, and multiplication structure using a novel double mesa structure. This double mesa structure effectively confines the electric field inside the diode, as confirmed through simulation data. This leads to a reduced contribution of charge carriers from interface states at the etched sidewalls to the dark current. The diodes exhibit a dark current reduction by a factor of 7 compared to a standard single mesa structure, while the optical properties remain unchanged. At a wavelength of 1310 nm, a maximum optical responsivity of 10.1 A/W, corresponding to a gain of 46, is achieved. Temperature-dependent dark current measurements showed an increase of the underlying activation energy from 0.13 eV to 0.28 eV. This results to a dark current of 0.14 nA at a temperature of 170 K and a bias voltage of 95 % VBD, which is approximately 100 times smaller than that of the single mesa APDs at 12.7 nA.
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Germany (DE)How to cite
APA:
Wanitzek, M., Hack, M., Ramachandra, H., Seidel, L., Schwarz, D., Schulze, J., & Oehme, M. (2024). Reduction of dark current in Ge-on-Si avalanche photodiodes using a double mesa structure. In Nader Engheta, Mikhail A. Noginov, Nikolay I. Zheludev, Nikolay I. Zheludev (Eds.), Proceedings of SPIE - The International Society for Optical Engineering. San Diego, CA, US: SPIE.
MLA:
Wanitzek, Maurice, et al. "Reduction of dark current in Ge-on-Si avalanche photodiodes using a double mesa structure." Proceedings of the Metamaterials, Metadevices, and Metasystems 2024, San Diego, CA Ed. Nader Engheta, Mikhail A. Noginov, Nikolay I. Zheludev, Nikolay I. Zheludev, SPIE, 2024.
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