On-chip microresonator dispersion engineering via segmented sidewall modulation
Kheyri M, Zhang S, Bi T, Pal A, Zhang H, Zhang Y, Alabbadi A, Yan H, Ghosh A, Hill L, Bianucci P, Butzen E, Gannott F, Gumann A, Harder I, Ohletz O, Del’Haye P (2025)
Publication Type: Journal article
Publication year: 2025
Journal
Book Volume: 13
Pages Range: 367-372
Journal Issue: 2
DOI: 10.1364/PRJ.530537
Abstract
Microresonator dispersion plays a crucial role in shaping the nonlinear dynamics of microcavity solitons. Here, we introduce and validate a method for dispersion engineering through modulating a portion of the inner edge of ring waveguides. We demonstrate that such partial modulation has a broadband effect on the dispersion profile, whereas modulation on the entire resonator’s inner circumference leads to mode splitting primarily affecting one optical mode. The impact of spatial modulation amplitude, period, and number of modulations on the mode splitting profile is also investigated. Through the integration of four modulated sections with different modulation amplitudes and periods, we achieve mode splitting across more than 50 modes over a spectral range exceeding 100 nm in silicon nitride resonators. These results highlight both the simplicity and efficacy of our method in achieving flatter dispersion profiles.
Involved external institutions
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light
Germany (DE)
Concordia University
Canada (CA)
Germany (DE)
Concordia University
Canada (CA)
How to cite
APA:
Kheyri, M., Zhang, S., Bi, T., Pal, A., Zhang, H., Zhang, Y.,... Del’Haye, P. (2025). On-chip microresonator dispersion engineering via segmented sidewall modulation. Photonics Research, 13(2), 367-372. https://doi.org/10.1364/PRJ.530537
MLA:
Kheyri, Masoud, et al. "On-chip microresonator dispersion engineering via segmented sidewall modulation." Photonics Research 13.2 (2025): 367-372.
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