Impact of a Thin Sacrificial Mo Layer on the Formation of the Wide Band Gap ACIGSe Absorber/ITO Thin-Film Solar Cell Interface

Demling A, Gutzler R, Almeida Alves CF, Wilks RG, Félix R, Hariskos D, Paetel S, Cerqueira R, Sadewasser S, Witte W, Bär M (2025)


Publication Type: Journal article

Publication year: 2025

Journal

DOI: 10.1021/acsami.5c02315

Abstract

The effect of a thin sacrificial Mo interlayer on the device performance of a thin-film solar cell based on a wide band gap (1.46 eV) (Ag, Cu)(In, Ga)Se2 (ACIGSe)/indium tin oxide (ITO) layer stack and its influence on the chemical composition at the absorber/transparent back contact (TBC) interface are investigated. The solar cell without a Mo interlayer exhibits an efficiency of less than 1%, whereas the inclusion of an approximately 10 nm thick Mo interlayer produces a cell with an efficiency of 10.1%, with the fill factor being more than tripled. Scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy line scans show strong GaOx formation at the absorber/transparent conductive oxide (TCO) interface in a Mo-free sample and a significant decrease in the amount of GaOx in a sample with the Mo interlayer included. Cleaving the absorber/TBC interface allowed us to study the absorber back side and the exposed ITO TCO using hard X-ray photoelectron spectroscopy. The nearly complete conversion of the metallic Mo interlayer into MoSe2 and MoOx is revealed. It is suggested that the formation of MoOx, which may act as a hole-selective contact, together with inhibited GaOx formation might be responsible for the pronounced performance enhancement for the cell with the thin Mo interlayer.

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APA:

Demling, A., Gutzler, R., Almeida Alves, C.F., Wilks, R.G., Félix, R., Hariskos, D.,... Bär, M. (2025). Impact of a Thin Sacrificial Mo Layer on the Formation of the Wide Band Gap ACIGSe Absorber/ITO Thin-Film Solar Cell Interface. ACS Applied Materials and Interfaces. https://doi.org/10.1021/acsami.5c02315

MLA:

Demling, Angelika, et al. "Impact of a Thin Sacrificial Mo Layer on the Formation of the Wide Band Gap ACIGSe Absorber/ITO Thin-Film Solar Cell Interface." ACS Applied Materials and Interfaces (2025).

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