Analysis of effective carrier mobility in the multi-quantum wells of DUV AlGaN LEDs by carrier transport simulations
Alhussien Ali Marouf I, Römer F, Schilling M, Biebler F, Höpfner J, Grigoletto M, Wernicke T, Kneissl M, Witzigmann B (2025)
Publication Type: Conference contribution
Publication year: 2025
Publisher: SPIE
Pages Range: 26
Conference Proceedings Title: Proceedings Volume PC13360, Physics and Simulation of Optoelectronic Devices XXXIII
Event location: San Francisco
DOI: 10.1117/12.3042015
Abstract
AlGaN-based LEDs show promise in Deep Ultraviolet (DUV) emission for environmental and medical uses, but optimizing Carrier Injection Efficiency (CIE) is challenging. This study uses a microscopic simulation model to investigate the emission spectra of dual wavelength AlGaN LEDs. The model includes advanced features such as carrier transport dynamics, and radiative recombination processes. The simulations examine LEDs with varying Quantum Wells (QWs) emitting at 233 nm and 250 nm to understand carrier distribution. Results indicate that electron densities in the MQW stack are higher than hole densities, leading to an imbalance that affects CIE and optical spectra.
Authors with CRIS profile
Ibrahim Alhussien Ali Marouf
Lehrstuhl für Optoelektronik
Friedhard Römer
Lehrstuhl für Optoelektronik
Bernd Witzigmann
Lehrstuhl für Optoelektronik
Involved external institutions
Germany (DE)How to cite
APA:
Alhussien Ali Marouf, I., Römer, F., Schilling, M., Biebler, F., Höpfner, J., Grigoletto, M.,... Witzigmann, B. (2025). Analysis of effective carrier mobility in the multi-quantum wells of DUV AlGaN LEDs by carrier transport simulations. In Proceedings Volume PC13360, Physics and Simulation of Optoelectronic Devices XXXIII (pp. 26). San Francisco, US: SPIE.
MLA:
Alhussien Ali Marouf, Ibrahim, et al. "Analysis of effective carrier mobility in the multi-quantum wells of DUV AlGaN LEDs by carrier transport simulations." Proceedings of the OPTO, San Francisco SPIE, 2025. 26.
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