600 °C Operation of a LDMOS Integrated on a 4H-SiC CMOS Platform
Kammel R, Dick J, May A, Rommel M, Schulze J (2025)
Publication Type: Conference contribution
Publication year: 2025
Publisher: Institute of Electrical and Electronics Engineers Inc.
Pages Range: 1674-1679
Conference Proceedings Title: 2025 MIPRO 48th ICT and Electronics Convention, MIPRO 2025 - Proceedings
Event location: Opatija
ISBN: 9798331535971
DOI: 10.1109/MIPRO65660.2025.11131887
Abstract
Laterally "diffused"metal oxide semiconductor transistors (LDMOS) play an important role for the integration of power electronics in integrated circuits, due to their lateral structure matching the CMOS design architecture. This work demonstrates the successful fabrication of LDMOS transistors on 4H-SiC and their operation at temperatures up to 600 C. That capability allows power devices to operate at higher temperatures beyond the limits of Silicon MOSFETs, eliminating the need for complex cooling systems for the integrated circuit. In this work, low threshold voltage shift, especially for operation temperatures above 300 C, temperature dependence of the on-state resistance and the saturation current, as well as permanent degradation processes are discussed.
Authors with CRIS profile
Robert Kammel
Lehrstuhl für Elektronische Bauelemente
Jan Dick
Lehrstuhl für Elektronische Bauelemente
Jörg Schulze
Lehrstuhl für Elektronische Bauelemente
Involved external institutions
Germany (DE)How to cite
APA:
Kammel, R., Dick, J., May, A., Rommel, M., & Schulze, J. (2025). 600 °C Operation of a LDMOS Integrated on a 4H-SiC CMOS Platform. In Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Pavle Ergovic, Tihana Galina Grbac, Vera Gradisnik, Stjepan Gros, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Edvard Tijan, Joe S. Valacich, Neven Vrcek, Boris Vrdoljak (Eds.), 2025 MIPRO 48th ICT and Electronics Convention, MIPRO 2025 - Proceedings (pp. 1674-1679). Opatija, HR: Institute of Electrical and Electronics Engineers Inc..
MLA:
Kammel, Robert, et al. "600 °C Operation of a LDMOS Integrated on a 4H-SiC CMOS Platform." Proceedings of the 48th MIPRO ICT and Electronics Convention, MIPRO 2025, Opatija Ed. Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Pavle Ergovic, Tihana Galina Grbac, Vera Gradisnik, Stjepan Gros, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Edvard Tijan, Joe S. Valacich, Neven Vrcek, Boris Vrdoljak, Institute of Electrical and Electronics Engineers Inc., 2025. 1674-1679.
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