Simulation of gain characteristics in AlGaN quantum wells under impact of inhomogeneous band broadening

Kölle S, Römer F, Witzigmann B (2026)

Publication Type: Journal article

Publication year: 2026

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 128

Article Number: 163306

Journal Issue: 16

DOI: 10.1063/5.0325429

Abstract

We demonstrate a novel band broadening model for the effects of alloy fluctuation on stimulated emission in aluminum gallium nitride (AlGaN) quantum wells (QWs). This model is used to study UV-C laser diode designs for different QW widths 3, 4.5, and 9 nm and varying Al mole fractions. We derive optimal parameters for target wavelengths of 270 and 240 nm. Using the 270 nm design as a case study, we analyze the impact of inhomogeneous broadening on the gain characteristic.

Authors with CRIS profile

Sebastian Kölle Lehrstuhl für Optoelektronik Friedhard Römer Lehrstuhl für Optoelektronik Bernd Witzigmann Lehrstuhl für Optoelektronik

How to cite

APA:

Kölle, S., Römer, F., & Witzigmann, B. (2026). Simulation of gain characteristics in AlGaN quantum wells under impact of inhomogeneous band broadening. Applied Physics Letters, 128(16). https://doi.org/10.1063/5.0325429

MLA:

Kölle, Sebastian, Friedhard Römer, and Bernd Witzigmann. "Simulation of gain characteristics in AlGaN quantum wells under impact of inhomogeneous band broadening." Applied Physics Letters 128.16 (2026).

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