Efficiency enhancement to 14.8% in planar n-Si/PEDOT:PSS hybrid solar cells via rear-interface SnO2 quantum dot deposition

Khan J, ULLAH I, Hafeez F, Ali G, Ahmad S, Mosleh MA, Arshad M, Gamea O (2026)


Publication Type: Journal article

Publication year: 2026

Journal

Book Volume: 24

Article Number: 100872

DOI: 10.1016/j.rsurfi.2026.100872

Abstract

Recently, n-Si/organic heterojunction solar cells (HSCs) have garnered increased attention for their low cost, relatively high efficiency, and ease of device fabrication. However, their performance remains limited by charge recombination at the rear electrode and at the n-Si interface. Here, a simple, environmentally friendly, and cost-effective method involves synthesizing tin oxide (SnO2) quantum dots (QDs) deposited on the rear interface of n-Si, which serve as passivation, hole-blocking, and electron-conduction layers. First-principles calculations were used to evaluate the passivation and charge-barrier characteristics of SnO2 QDs. The interface-modified device demonstrates a high power conversion efficiency of 14.8%, mainly due to the suppression of photogenerated charge carriers. The properties of the interface-modified devices, including photovoltaic performance, charge transfer, and surface chemical composition, were analyzed using Electrochemical Impedance Spectroscopy, X-ray photoelectron spectroscopy, and photovoltage decay measurements. These findings suggest a promising strategy for developing next-generation n-Si/organic heterojunction solar cells.

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APA:

Khan, J., ULLAH, I., Hafeez, F., Ali, G., Ahmad, S., Mosleh, M.A.,... Gamea, O. (2026). Efficiency enhancement to 14.8% in planar n-Si/PEDOT:PSS hybrid solar cells via rear-interface SnO2 quantum dot deposition. Results in Surfaces and Interfaces, 24. https://doi.org/10.1016/j.rsurfi.2026.100872

MLA:

Khan, Junaid, et al. "Efficiency enhancement to 14.8% in planar n-Si/PEDOT:PSS hybrid solar cells via rear-interface SnO2 quantum dot deposition." Results in Surfaces and Interfaces 24 (2026).

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