Towards a Fully Integrated 4H-SiC A-Plane Quantum-Chip – Transistors and Light Emitters

Schwarberg J, Dick J, May A, Michałowski P, Kallinger B, Kammel R, Rommel M, Schulze J (2026)


Publication Language: English

Publication Type: Journal article

Publication year: 2026

Journal

Book Volume: 1056

Pages Range: 7-15

DOI: 10.4028/p-tstCC7

Abstract

Silicon vacancies (VSi) are relevant for quantum technologies, including sensing, computing, and communication. For the realization of quantum photonic integrated circuits (QPICs) and, therefore, co-integration of optical and electrical devices with resonant excitation through the wafer surface, a-plane 4H-SiC wafers are required. Transferring established complementary metal-oxide-semiconductor (CMOS)-compatible processes from c-plane to a-plane wafers is, therefore, a crucial step. In this work, key fabrication steps, namely ion implantation, thermal oxidation, and ohmic contact formation, were investigated for a-plane 4H-SiC substrates. To demonstrate successful process transfer, p-channel MOS field-effect transistors were fabricated and electrically characterized, showing comparable Ion/Ioff ratios and mobilities to their c-plane counterparts, but with a threshold voltage shift from −7.1 V to −12.0 V on the a-plane. Additionally, tunneling diodes were realized as broadband light emitters, with a significant portion of the emission spectrum falling within the range of off-resonant excitation of VSi centers. The devices maintained light emission functionality down to cryogenic temperatures.

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APA:

Schwarberg, J., Dick, J., May, A., Michałowski, P., Kallinger, B., Kammel, R.,... Schulze, J. (2026). Towards a Fully Integrated 4H-SiC A-Plane Quantum-Chip – Transistors and Light Emitters. Key Engineering Materials, 1056, 7-15. https://doi.org/10.4028/p-tstCC7

MLA:

Schwarberg, Jannik, et al. "Towards a Fully Integrated 4H-SiC A-Plane Quantum-Chip – Transistors and Light Emitters." Key Engineering Materials 1056 (2026): 7-15.

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