CEA-Leti (Laboratoire d'electronique des technologies de l'information)

Research facility


Location: Grenoble

ISNI: -

ROR: https://ror.org/04mf0wv34

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Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

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To

Abstract

Journal

5G-ALLSTAR: An Integrated Satellite-Cellular System for 5G and Beyond (2020) Kim J, Casati G, Pietrabissa A, Giuseppi A, Strinati EC, Cassiau N, Noh G, et al. Conference contribution MOICANA: Monolithic cointegration of QD-based InP on SiN as a versatile platform for the demonstration of high-performance and low-cost PIC transmitters (2019) Vyrsokinos K, Chatzitheocharis D, Papadovasilakis M, Ketzaki D, Calo C, Caillaud C, Sacchetto D, et al. Conference contribution From devices to circuits: modelling the performance of 5nm nanosheets (2019) Brown AR, Wang L, Asenov P, Kluepfel FJ, Cheng B, Martinie S, Rozeau O, et al. Conference contribution The X-ray Integral Field Unit (X-IFU) for Athena (2014) Ravera L, Barret D, Den Herder JW, Piro L, Cledassou R, Pointecouteau E, Peille P, et al. Conference contribution Galvanically isolated differential data transmission using capacitive coupling and a modified Manchester algorithm for smart power converters (2014) Frey L, Niedermeier MT, Wenger MM, Filimon R, Sedlacek V, Lorentz VR, Fort C, et al. Conference contribution, Conference Contribution Mechanical Characterization of Micrometric Chitosan-Coated Vesicle by Atomic Force Microscopy (2013) Rinaudo M, Quemeneur F, Dubreuil F, Fery A, Pepin-Donat B Journal article Experiments and simulation of the diffusion and activation of the n-type dopants P, As, and Sb implanted into germanium (2011) Koffel S, Kaiser RJ, Bauer AJ, Amon B, Pichler P, Lorenz J, Frey L, et al. Journal article, Original article Honeycomb voids due to ion implantation in germanium (2010) Kaiser RJ, Koffel S, Pichler P, Bauer AJ, Amon B, Claverie A, Benassayag G, et al. Journal article, Original article Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes (2005) Pons M, Blanquet E, Dedulle J, Ucar M, Wellmann P, Danielsson Ö, Ferret P, et al. Journal article, Original article