Fraunhofer-Institut für Photonische Mikrosysteme (IPMS) / Fraunhofer Institute for Photonic Microsystems

Research facility


Location: Dresden, Germany (DE) DE

ISNI: 0000000104128165

ROR: https://ror.org/020n3fw10

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Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

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To

Abstract

Journal

Precise Compensation of Device Variability in IGZO-based Ferroelectric ThinFilm Transistors for Enhanced Transparent Display Performance (2024) Joch D, Lehninger D, Sunil A, Sanctis S, Lang T, Zeltner J, Wartenberg P, et al. Conference contribution Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation (2023) Sk MR, Thunder S, Lehninger D, Sanctis S, Raffel Y, Lederer M, Jank MPM, et al. Journal article Noise-robust Machine Learning Models for Predictive Maintenance Applications (2023) Suawa P, Halbinger A, Jongmanns M, Reichenbach M Journal article A Fully Integrated Ferroelectric Thin-Film-Transistor – Influence of Device Scaling on Threshold Voltage Compensation in Displays (2021) Lehninger D, Ellinger M, Ali T, Li S, Mertens K, Lederer M, Olivio R, et al. Journal article Copper electroplating with polyethylene glycol: Part II. Experimental analysis and determination of model parameters (2018) Yang H, Krause R, Scheunert C, Liske R, Uhlig B, Preusse A, Dianat A, et al. Journal article Ferroelectricity in simple binary ZrO 2 and HfO 2 (2012) Mueller J, Boescke TS, Schroeder U, Mueller S, Braeuhaus D, Boettger U, Frey L, Mikolajick T Journal article, Original article Nanosecond polarization switching and long retention in a novel MFIS-FET based on ferroelectric HfO 2 (2012) Mueller J, Boescke TS, Schroeder U, Hoffmann R, Mikolajick T, Frey L Journal article, Original article Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications (2011) Mueller J, Boescke TS, Braeuhaus D, Schroeder U, Boettger U, Sundqvist J, Kuecher P, et al. Journal article, Original article Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition (2009) Mueller J, Boescke TS, Schroeder U, Reinicke M, Oberbeck L, Zhou D, Weinreich W, et al. Journal article, Original article