SiC-BIFET: Untersuchungen zu bipolaren SiC-Feldeffekttransistoren für das Mittelspannungsnetz

Internally funded project

Start date : 01.09.2010

End date : 10.07.2017

Overview

Publications

(7)

Conduction loss reduction for bipolar injection field-effect-transistors (BIFET) (2016) Hürner A, Mitlehner H, Erlbacher T, Bauer A, Frey L Authored book, Volume of book series Robust double-ring junction termination extension design for high voltage power semiconductor devices based on 4H-SiC (2015) Hürner A, Di Benedetto L, Erlbacher T, Mitlehner H, Bauer A, Frey L Authored book, Volume of book series Temperature dependent characterization of bipolar injection field- effect-transistors (BiFET) for determining the short-circuit-capability (2015) Hürner A, Erlbacher T, Mitlehner H, Bauer A, Frey L Authored book, Volume of book series Experimental analysis of bipolar SiC-devices for future energy distribution systems (2014) Hürner A, Mitlehner H, Erlbacher T, Bauer A, Frey L Conference contribution, Conference Contribution Temperature and electrical field dependence of the ambipolar mobility in n-doped 4H-SiC (2014) Hürner A, Bonse C, Clemmer G, Kallinger B, Heckel T, Erlbacher T, Mitlehner H, et al. Authored book, Volume of book series Comparative study of n-LIGBT and n-LDMOS structures on 4H-SiC (2013) Häublein V, Temmel G, Mitlehner H, Rattmann G, Strenger C, Hürner A, Bauer A, et al. Authored book, Volume of book series Alloying of ohmic contacts to n-type 4H-SiC via laser irradiation (2013) Hürner A, Schlegl T, Adelmann B, Mitlehner H, Hellmann R, Bauer A, Frey L Authored book, Volume of book series